A method including forming a via dielectric layer on a semiconductor device substrate; forming a trench dielectric layer on the via dielectric layer; forming a trench through the trench dielectric layer to expose the via dielectric layer; forming a via in the via dielectric layer through the trench to...http://www.google.com/patents/US20050064616?utm_source=gb-gplus-sharePatent US20050064616 - Semiconductor channel on insulator structure
