A fast, fieldless flash memory cell includes an erase node having a control gate and a floating gate, both formed of polycrystalline silicon, a program transistor sharing the floating gate and control gate with the erase node, and a read transistor sharing the floating gate and control ...http://www.google.com/patents/US5760438?utm_source=gb-gplus-sharePatent US5760438 - High speed flash memory cell structure and method
