A polycrystal thin film forming method comprising the step of forming a semiconductor thin film on a substrate 14, and the step of flowing a heated gas to the semiconductor thin film while an energy beam 38 is being applied to the semiconductor thin film at a region to which the gas is being applied...http://www.google.com/patents/US6582996?utm_source=gb-gplus-sharePatent US6582996 - Semiconductor thin film forming method
