A transistor device formed on a semiconductor-on-insulator (SOI) substrate with a buried oxide (BOX) layer disposed thereon and an active layer disposed on the BOX layer having active regions defined by isolation trenches. The device includes a gate defining a channel interposed between a source and...http://www.google.com/patents/US6441433?utm_source=gb-gplus-sharePatent US6441433 - Method of making a multi-thickness silicide SOI device
