A gate is formed by depositing a gate conductive layer over a substrate layer, depositing an organic spin-on bottom anti-reflective coating (BARC) over the gate conductive layer, and forming a resist mask on the BARC. Next, the resist mask is controllably etched to further reduce the critical dimensions...http://www.google.com/patents/US5965461?utm_source=gb-gplus-sharePatent US5965461 - Controlled linewidth reduction during gate pattern formation using a spin-on barc
