The present invention teaches fabrication of a high-resistance integrated circuit diffusion resistor that uses standard CMOS process steps. By appropriate masking during ion-implantation of source/drain diffusion regions, diffusion resistors created during NMOS source/drain implant may be counterdoped...http://www.google.com/patents/US5990538?utm_source=gb-gplus-sharePatent US5990538 - High resistivity integrated circuit resistor
