The semiconductor device includes in a semiconductor substrate (1) at least one predetermined region (6) of the substrate intended subsequently to form an active area, uncovered on its upper surface and situated between lateral trenches (7) containing an insulative material including a layer (9) of a...http://www.google.com/patents/US5641704?utm_source=gb-gplus-sharePatent US5641704 - Method of isolating active areas of a semiconductor substrate by shallow trenches and narrow trenches
