The present invention relates to a high power IC (Integrated Circuit) semiconductor device and process for making same. More particularly, the invention encompasses a high conductivity or low resistance metal stack to reduce the device R-on which is stable at high temperatures while in contact with a...http://www.google.com/patents/US7800239?utm_source=gb-gplus-sharePatent US7800239 - Thick metal interconnect with metal pad caps at selective sites and process for making the same
