In forming an electrode 2 on a silicon oxide film 5 on a semiconductor substrate 4 through a silicon oxide film 5, for example, the gate electrode 2 is structured in a laminated structure of a plurality of polycrystalline silicon layers 6. The portion of the gate electrode 2 is formed...http://www.google.com/patents/US5683515?utm_source=gb-gplus-sharePatent US5683515 - Apparatus for manufacturing a semiconductor device having conductive then films 
