A titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas...http://www.google.com/patents/US4976839?utm_source=gb-gplus-sharePatent US4976839 - Method of forming a barrier layer between a silicon substrate and an aluminum electrode of a semiconductor device
