By using lasers having different wavelengths in laser annealing of an amorphous semiconductor film, the amorphous semiconductor film can be crystallized and the crystallinity of the crystallized film is improved. A laser 126 to 370 nm in wavelength is used first to subject an amorphous semiconductor...http://www.google.com/patents/US6872607?utm_source=gb-gplus-sharePatent US6872607 - Method of manufacturing a semiconductor device
