A method for forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; forming a metal-containing layer on the gate dielectric; and forming a composite layer over the metal-containing layer. The step of forming the...http://www.google.com/patents/US7892961?utm_source=gb-gplus-sharePatent US7892961 - Methods for forming MOS devices with metal-inserted polysilicon gate stack
