Lifetime of a short-channel NMOS device is increased by modifying distributions of electrically active LDD dopant at boundaries of the device's LDD regions. The LDD dopant distributions are modified by implanting counter-dopants at the boundaries of the LDD regions. Group III counter-dopants such as...http://www.google.com/patents/US6180470?utm_source=gb-gplus-sharePatent US6180470 - FETs having lightly doped drain regions that are shaped with counter and noncounter dorant elements
