A method for forming transistors static-random-access-memory. The method comprises the steps of: providing a substrate which at least comprises a cell area and periphery area, wherein the cell area comprises a first P-type region, a second P-type region, a first N-type region and a second N-type region,...http://www.google.com/patents/US6686635?utm_source=gb-gplus-sharePatent US6686635 - Four transistors static-random-access-memory
