The basis of the present invention is a charged particle beam exposure method comprising the steps of: (a) generating a plurality of areas within the sub-fields; (b) determining the pattern density within each of the areas, and correcting the pattern density in accordance with the pattern density of...http://www.google.com/patents/US6087052?utm_source=gb-gplus-sharePatent US6087052 - Charged particle beam exposure method utilizing subfield proximity corrections
