A method to control the poly-Si depletion effect in CMOS structures utilizing a gas phase doping process which is capable of providing a high concentration of dopant atoms at the gate dielectric/poly-Si interface is provided. The present invention also provides CMOS structure including, for example,...http://www.google.com/patents/US7655551?utm_source=gb-gplus-sharePatent US7655551 - Control of poly-Si depletion in CMOS via gas phase doping
