In a method of manufacturing a semiconductor device, after a lateral growth region 107 is formed by using a catalytic element for facilitating crystallization of silicon, the catalytic element is gettered into a phosphorus added region 108 by a heat treatment. Thereafter, a gate insulating film 113 is...http://www.google.com/patents/US7166500?utm_source=gb-gplus-sharePatent US7166500 - Method of manufacturing a semiconductor device
