A method of fabricating complementary metal oxide semiconductor (CMOS) field effect transistors which includes selective doping and full silicidation of a polysilicon material comprising the gate electrode of the transistor. In one embodiment, prior to silicidation, the polysilicon is amorphized. In...http://www.google.com/patents/US20050064636?utm_source=gb-gplus-sharePatent US20050064636 - Method and apparatus for fabricating CMOS field effect transistors
