An enhanced mobility MOSFET device (10) comprises a channel layer (12) formed on a monocrystalline silicon layer (11). The channel layer (12) comprises an alloy of silicon and a second material with the second material substitutionally present in silicon lattice sites at an atomic percentage that places...http://www.google.com/patents/US5561302?utm_source=gb-gplus-sharePatent US5561302 - Enhanced mobility MOSFET device and method
