A gated electron-emitter is fabricated by a process in which particles (26) are deposited over an insulating layer (24). Gate material is provided over the insulating layer in the space between the particles after which the particles and any overlying material are removed. The remaining gate material...http://www.google.com/patents/US5865657?utm_source=gb-gplus-sharePatent US5865657 - Fabrication of gated electron-emitting device utilizing distributed particles to form gate openings typically beveled and/or combined with lift-off or electrochemical removal of excess emitter material
