A structure is provided which includes a semiconductor device region including a first portion and a second portion. A current-conducting member is provided, which extends horizontally over the first portion but not over the second portion. A first film, such as a stress-imparting film, extends over...http://www.google.com/patents/US7098536?utm_source=gb-gplus-sharePatent US7098536 - Structure for strained channel field effect transistor pair having a member and a contact via
