The present invention provides a method for determining resist trim times in an etch process. In one embodiment of the invention, the method for determining resist trim times includes obtaining resist profile data and critical dimension (CD) data of a patterned resist layer using a scatterometer, in...http://www.google.com/patents/US6808942?utm_source=gb-gplus-sharePatent US6808942 - Method for controlling a critical dimension (CD) in an etch process
