MRAM memory having a memory cell array (2) comprising magnetoresistive memory components (6a, 6b) arranged in at least one memory cell layer above a semiconductor substrate (4), word lines (7) and bit lines (8, 9) for making contact with the magnetoresistive memory components (6a, 6b) in the memory cell...http://www.google.com/patents/US20010035545?utm_source=gb-gplus-sharePatent US20010035545 - MRAM memory
