A method of fabricating hafnium oxide and/or zirconium oxide films is provided. The methods include providing a mixture of Hf and/or Zr alkoxide dissolved, emulsified or suspended in a liquid; vaporizing at least the alkoxide and depositing the vaporized component at a temperature of greater than 400°...http://www.google.com/patents/US20060138603?utm_source=gb-gplus-sharePatent US20060138603 - Deposition of hafnium oxide and/or zirconium oxide and fabrication of passivated electronic structures
