A solid state image sensing device comprising a matrix-disposed photoelectric diodes 27+21, 27+21, . . . . on a monolithic substrate, wherein each one transferring switching means 24, . . . . and each one noise eliminating MOS switch 26, . . . . are provided for each vertical column of said matrix-disposed...http://www.google.com/patents/US4189749?utm_source=gb-gplus-sharePatent US4189749 - Solid state image sensing device
