A dual-gate cell structure with self-aligned gates. A polysilicon spacer forms a second gate (213) separated from a first gate (201), which is also polysilicon, by a dielectric layer (207). A drain region (219) and a source region (221) are formed next to the gates within a shallower well. The shallower...http://www.google.com/patents/US6440796?utm_source=gb-gplus-sharePatent US6440796 - Poly spacer split gate cell with extremely small cell size
