Process sequences used to simultaneously form a first dielectric gate layer for a first group of MOSFET elements, and a second dielectric gate layer for a second group of MOSFET elements, with the thickness of the first dielectric gate layer different than the thickness of the second gate dielectric...http://www.google.com/patents/US6436771?utm_source=gb-gplus-sharePatent US6436771 - Method of forming a semiconductor device with multiple thickness gate dielectric layers
