In a method for manufacturing a semiconductor laser diode, producing visible light after growing a p type GaAs contact layer on a p type AlGaInP cladding layer, an n type layer comprising that can be selectively etched with an etchant that does not etch GaAs is grown on the p type GaAs contact layer....http://www.google.com/patents/US5508225?utm_source=gb-gplus-sharePatent US5508225 - Method for manufacturing semiconductor visible laser diode
