A method for in-situ determination by photoreflectance of the Fermi level (V.sub.F) at the surfaces or interfaces of GaAs and related materials, in which a probe beam of monochromatic light and a modulated pump beam from a pump source are directed onto a sample, and the measured barrier height V.sub.m...http://www.google.com/patents/US5159410?utm_source=gb-gplus-sharePatent US5159410 - Method for in-situ determination of the fermi level in GaAs and similar materials by photoreflectance
