A method for selectively etching oxides from the face of a semiconductor layer 10 is disclosed herein. The semiconductor layer 10 has at least first and second oxide regions 12 and 14 formed on the surface thereof. The oxides 12 and 14 may be doped oxides such as BPSG or PSG and/or thermally treated...http://www.google.com/patents/US5376233?utm_source=gb-gplus-sharePatent US5376233 - Method for selectively etching oxides
