Disclosed is a method of producing semiconductor devices, comprising forming a laminate of a lower poly-Si film and an upper silicon nitride film on the substrate surface in a manner to provide a pattern of electrodes and wiring layer, removing the patterned silicon nitride film except the region in...http://www.google.com/patents/US4413403?utm_source=gb-gplus-sharePatent US4413403 - Method of producing semiconductor devices
