A semiconductor device and method of manufacture provide an n-channel field effect transistor (nFET) having a shallow trench isolation with overhangs that overhang Si-SiO2 interfaces in a direction parallel to the direction of current flow and in a direction transverse to current flow. The device and...http://www.google.com/patents/US20050082634?utm_source=gb-gplus-sharePatent US20050082634 - HIGH PERFORMANCE STRAINED CMOS DEVICES
