A memory cell including a phase-change material may have reduced leakage current. The cell may receive signals through a buried wordline in one embodiment. The buried wordline may include a sandwich of a more lightly doped N type region over a more heavily doped N type region over a less heavily doped...http://www.google.com/patents/US6992365?utm_source=gb-gplus-sharePatent US6992365 - Reducing leakage currents in memories with phase-change material
