Disclosed is a process for making a self-aligning conductive via structure in a semiconductor device. The process includes forming a first interconnect metallization layer over an oxide layer. Forming an etch stop layer over the first interconnect metallization layer. Forming a conductive via metallization...http://www.google.com/patents/US6133635?utm_source=gb-gplus-sharePatent US6133635 - Process for making self-aligned conductive via structures
