An iPVD system uses a high density inductively coupled plasma (ICP) at high pressure of at least 50 mTorr to deposit uniform ultra-thin layer of a tantalum nitride material barrier material onto the sidewalls of high aspect ratio nano-size features on semiconductor substrates, preferably less than 2...http://www.google.com/patents/US7700474?utm_source=gb-gplus-sharePatent US7700474 - Barrier deposition using ionized physical vapor deposition (iPVD)
