In a semiconductor circuit using a silicon film in which crystals grow in the direction parallel to a substrate, the distance between the position of a starting region of crystal growth and the position of the respective active layers are made the same. Thus, the difference of the characteristics due...http://www.google.com/patents/US6124602?utm_source=gb-gplus-sharePatent US6124602 - Semiconductor circuit having a crystal growth in an active layer where a specific distance is established between a selected portion and where the growth starts to the active layer of the circuit
