Capacitors and methods of forming capacitors are disclosed. In one implementation, a capacitor includes a capacitor dielectric layer including Ta2O5 formed over a first capacitor electrode. A second capacitor electrode is formed over the Ta2O5 capacitor dielectric layer. Preferably, at least a portion...http://www.google.com/patents/US6400552?utm_source=gb-gplus-sharePatent US6400552 - Capacitor with conductively doped Si-Ge alloy electrode