A non-volatile memory (30) comprises nanocrystal memory cells (50, 51, 53). The program and erase threshold voltage of the memory cell transistors (50, 51, 53) increase as a function of the number of program/erase operations. During a read operation, a reference transistor (46) provides a reference current...http://www.google.com/patents/US20050041503?utm_source=gb-gplus-sharePatent US20050041503 - Non-volatile memory having a reference transistor
