Structure and methods of fabrication are disclosed for an enhanced FET devices in which dopant impurities are prevented from diffusing through the gate insulator. The structure comprises a Si:C, or SiGe:C, layer which is sandwiched between the gate insulator and a layer which is doped with impurities...http://www.google.com/patents/US20050156169?utm_source=gb-gplus-sharePatent US20050156169 - High performance FET devices and methods thereof
