Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer...http://www.google.com/patents/US7750173?utm_source=gb-gplus-sharePatent US7750173 - Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
