A method for depositing a carbon doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 700 torr in a process chamber housing a patterned substrate having exposed single crystal material. The method further comprises providing a flow of a silicon source gas to the...http://www.google.com/patents/US7863163?utm_source=gb-gplus-sharePatent US7863163 - Epitaxial deposition of doped semiconductor materials
