Highly doped N- and P-type wells (16a, 16b) in a first silicon layer (16) on an insulator layer (14) of a SIMOX substrate (10). Complementary MOSFET devices (52,54,58,62) are formed in lightly doped N- and P-type active areas (22a, 22b) in a second silicon layer (22) formed on the first silicon layer...http://www.google.com/patents/US5137837?utm_source=gb-gplus-sharePatent US5137837 - Radiation-hard, high-voltage semiconductive device structure fabricated on SOI substrate
