Methods and apparatus are provided for a MOSFET (50, 99, 199) exhibiting increased source-drain breakdown voltage (BVdss). Source (S) (70) and drain (D) (76) are spaced apart by a channel (90) underlying a gate (84) and one or more carrier drift spaces (92, 92′) serially located between the channel...http://www.google.com/patents/US7211477?utm_source=gb-gplus-sharePatent US7211477 - High voltage field effect device and method
