A capacitor for a semiconductor structure is formed having a substrate, a stack of a buffer layer and a layer of ferroelectric material, and a top electrode. The capacitor can also have a layer of polysilicon between the substrate and the buffer layer. A method for forming the same, through establishing...http://www.google.com/patents/US5338951?utm_source=gb-gplus-sharePatent US5338951 - Structure of high dielectric constant metal/dielectric/semiconductor capacitor for use as the storage capacitor in memory devices
