A highly reliable semiconductor device capable of preventing generation of a leakage current is provided. The semiconductor device comprises a silicon substrate having a main surface and including a trench formed on the main surface. The trench is defined by surfaces including a bottom surface, a side...http://www.google.com/patents/US20030143815?utm_source=gb-gplus-sharePatent US20030143815 - Semiconductor device and method of fabricating the same
