A system and method are disclosed for processing a zero angstrom oxide interface dual poly gate structure for a flash memory device. An exemplary method can include removing an oxide on a surface of a first poly layer and forming a second poly layer on the first poly layer in a same processing chamber....http://www.google.com/patents/US7863175?utm_source=gb-gplus-sharePatent US7863175 - Zero interface polysilicon to polysilicon gate for flash memory
