A semiconductor device having a transistor channel with an enhanced stress is provided. To achieve the enhanced stress transistor channel, a nitride film is preferentially formed on the device substrate with little to no nitride on a portion of the gate stack. The nitride film may be preferentially deposited...http://www.google.com/patents/US20060286786?utm_source=gb-gplus-sharePatent US20060286786 - METHOD AND APPARATUS FOR INCREASE STRAIN EFFECT IN A TRANSISTOR CHANNEL
