A dielectric material forming method includes forming a first monolayer and forming a second monolayer on the first monolayer, one of the first and second monolayers comprising tantalum and oxygen and the other of the first and second monolayers comprising oxygen and another element different from tantalum....http://www.google.com/patents/US7052953?utm_source=gb-gplus-sharePatent US7052953 - Dielectric material forming methods and enhanced dielectric materials
