A semiconductor fabrication process includes forming a gate electrode overlying a substrate. A first silicon nitride spacer is formed adjacent the gate electrode sidewalls and a disposable silicon nitride spacer is then formed adjacent the offset spacer. An elevated source/drain structure, defined by...http://www.google.com/patents/US7125805?utm_source=gb-gplus-sharePatent US7125805 - Method of semiconductor fabrication incorporating disposable spacer into elevated source/drain processing
