US 7,837,790 B2 Nov. 23, 2010
(54) FORMATION AND TREATMENT OF
EPITAXIAL LAYER CONTAINING SILICON
(75) Inventors: Yihwan Kim, Milpitas, CA (US);
Arkadii V. Samoilov, Sunnyvale, CA
(73) Assignee: Applied Materials, Inc., Santa Clara,
( * ) Notice: Subject to any disclaimer, the term of this patent is extended or adjusted under 35 U.S.C. 154(b) by 1026 days.
(21) Appl.No.: 11/566,031
(22) Filed: Dec. 1, 2006
(65) Prior Publication Data
US 2008/0132018 Al Jun. 5, 2008
(51) Int. CI.
C30B 29/38 (2006.01)
(52) U.S. CI 117/4; 117/8; 117/9; 117/105;
(58) Field of Classification Search 117/4,
117/8, 9, 105, 109, 201 See application file for complete search history.
(56) References Cited
U.S. PATENT DOCUMENTS
Methods and apparatus for formation and treatment of epitaxial layers containing silicon and carbon are disclosed. Treatment of the epitaxial layer converts interstitial carbon to substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices. In specific embodiments, the treatment of the epitaxial layer involves annealing for short periods of time, for example, by laser annealing, millisecond annealing, rapid thermal annealing, and spike annealing in a environment containing nitrogen.
15 Claims, 3 Drawing Sheets